Sarkar, S. and Patra, S. and Bera, S.K. and Paul, G.K. and Ghosh, R. (2012) Rectifying properties of sol–gel synthesized Al:ZnO/Si(N–n) thin film heterojunctions. Physica E, 46. pp. 1-5. ISSN 1386-9477

Full text not available from this repository.

Abstract

We report on the rectifying behavior of sol–gel synthesized Al (1 and 3 at%):ZnO/Si (N–n) thin film isotype heterojunctions. The films were dense and uniform over the substrate and show polycrystalline morphology with defined grain boundaries. The current–voltage (I–V) characteristics of the junctions at room temperature and high temperature in air ambient were found to be asymmetric with an increase in rectification ratio (If/Ir) from 1.29 to 3.70 for 1 at and from 0.60 to 2.54 for 3 at% of Al (at a bias voltage of 5V) for increase in temperature upto 150 oC. The I–V characteristics of th ejunctions were explained on the basis of high temperature carrier injection and single carrier dynamics.

Item Type:	Article
Subjects:	Materials
Depositing User:	Dr. Sarita Ghosh
Date Deposited:	12 Apr 2016 10:44
Last Modified:	12 Apr 2016 10:44
URI:	http://cmeri.csircentral.net/id/eprint/122

Actions (login required)

View Item