Saha, Sanjit and Jana, Milan and Samanta, Pranab and Murmu, Naresh C. and Kim, Nam H. and Kuila, Tapas and Lee, Joong H. (2017) Investigation of band structure and electrochemical properties of h-BN/rGO composites for asymmetric supercapacitor applications. Materials Chemistry and Physics, 190. pp. 153-165.

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Abstract

The effect of different content of graphene oxide (GO) on the electrical and electrochemical property of h-BN/reduced GO (rGO) hetero-structure is investigated elaborately. The increasing amount of rGO within the h-BN moiety plays fascinating role by reducing the electronic work function while increasing the density of state of the electrode. Furthermore, different h-BN/rGO architecture shows different potential window and the transition from pseudocapacitance to electrochemical double layer capacitance (EDLC) is observed with increasing π-conjugation of C atoms. The rod like h-BN is aligned as sheet while forming super-lattice with rGO. Transmission electron microscopy images show crystalline morphology of the hetero-structure super-lattice. The valance band and Mott-Shotky relationship determined from Mott-Shotky X-ray photoelectron spectroscopy shows that the electronic band structure of super-lattice is improved as compared to the insulating h-BN. The h-BN/rGO super-lattice provides high specific capacitance of ∼960 F g−1. An asymmetric device configured with h-BN/rGO super-lattice and B, N doped rGO shows very high energy and power density of 73 W h kg−1 and 14,000 W kg−1, respectively. Furthermore, very low relaxation time constant of ∼1.6 ms and high stability (∼80%) after 10,000 charge-discharge cycles ensure the h-BN/rGO super-lattice as potential materials for the next generation energy storage applications.

Item Type:	Article
Subjects:	Supercapacitor
Depositing User:	Dr. Sarita Ghosh
Date Deposited:	13 Mar 2019 10:40
Last Modified:	13 Mar 2019 10:40
URI:	http://cmeri.csircentral.net/id/eprint/479

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